PART |
Description |
Maker |
WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H |
85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛? 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛? 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时5ns 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时0ns
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White Electronic Designs Corporation
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WE512K16-XG4X WE512K16-140G4C WE512K16-140G4CA WE5 |
Access time:200 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:20150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:150 ns; 5V power supply; 512K x 16 CMOS EEPROM module Access time:140 ns; 5V power supply; 512K x 16 CMOS EEPROM module EEPROM MCP
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White Electronic Designs
|
GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F |
1.8V, 85ns, 256Mbit StrataFlash Wireless Memory 1.8V, 85ns, 128Mbit StrataFlash Wireless Memory 1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory
|
Intel
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WS1M8V-100CC WS1M8V-100CM WS1M8V-100CMA |
100ns; 3.3V power supply; 2 x 512K x 8 dualithic module
|
White Electronic Designs
|
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40 4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40 IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR 4M (512K X 8) BIT
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FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
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AS5C4009ECJ-85L_883C AS5C4009ECJ-85L_IT AS5C4009EC |
512K x 8 SRAM Ultra Low Power SRAM 512K X 8 STANDARD SRAM, 100 ns, CDIP32 512K X 8 STANDARD SRAM, 85 ns, CDSO32 512K X 8 STANDARD SRAM, 70 ns, CDSO32 512K X 8 STANDARD SRAM, 55 ns, CDSO32
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MICROSS COMPONENTS AUSTIN SEMICONDUCTOR INC
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K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44 From old datasheet system 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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SAMSUNG[Samsung semiconductor] Samsung Electronic
|
AT60142FT-DC17M-E AT60142FT-DC17SSB AT60142FT-DD17 |
Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, UUC Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 17 ns, DFP36
|
Atmel Corp. Atmel, Corp.
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AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100 DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL Sync SRAM - 2.5V 2.5V 512K x 32/36 flowthrough burst synchronous SRAM
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Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC Alliance Semiconductor ...
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CY7C1049CV33 CY7C1049CV33-15ZXC CY7C1049CV33-10VC |
4-Mbit (512K x 8) Static RAM 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44 512K x 8 Static RAM 12k × 8静态RAM 512K x 8 Static RAM 512K X 8 STANDARD SRAM, 12 ns, PDSO44
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CYPRESS[Cypress Semiconductor] Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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N08M1618L1AW N08M1618L1A N08M1618L1AB N08M1618L1AB |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit 512K X 16 STANDARD SRAM, 150 ns, PBGA48 BGA-48
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AMI[AMI SEMICONDUCTOR] Unisonic Technologies Co., Ltd.
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